SIlicon Carbide Wafer 4inch dia x 350um 4H-N type P/R/D grade MOSEFTs/SBD/JBS

Product description:

4inch x 350um±25um Silicon Carbide wafer with 4 degree ±0.5° toward <1120> plane cutting angle, doped to N-type conductivity. Being a third-generation semiconductor, it plays an critical role in automotive industry as main traction inverter and high-speed motor drive. Its high band-gap gives it excellent high-voltage, high frequency and high-temperature tolerance. Unlike traditional Silicon, our SiC 4H-type wafers provide a critical 3x increase in bandgap energy and 10x higher breakdown electric field strength, making them the essential substrate for the next generation of power electronics.

Features:

Polytype excellency: Exclusively 4H-SiC structure to ensure maximum electron mobility and thermal conductivity.

Surface integrity: Finished with a state-of-the-art chemical mechanical polishing process. This ensures an atomically flat, "Epi-Ready" Si-face (0001) with sub-nanometer roughness (Ra < 0.2nm), eliminating sub-surface damage.

Production grade: Optimized for EV traction inverters and solar string inverters. Features low MPD ≤ 0.2cm¯² to ensure high device yields for large-area MOSFETs.

Research grade: Cost-effective solutions for R&D and process testing, maintaining 4H structural integrity with slightly higher defect tolerances.

Applications:

Automotive and E-Mobility, in traction inverters, SiC MOSFETs replace Silicon IGBTs to convert battery DC to motor AC with over 99% efficiency.

Renewable energy and smart grids. The "gatekeeper" of efficiency which can operate at higher frequencies, which shrinks the size of costly passive components like copper inductors and capacitors by up to 50%.

In rail tractions, SiC modules allow locomotives and high-speed trains (like the Shinkansen) to be 30% lighter and significantly quieter.

Manufacturing technique highlights:

We use a high-stability PVT process optimized for 4H-polytype purity. Our growth process features a 'defect-blocking' mechanism that effectively prevents BPD from migrating into the epitaxial surface, ensuring long-term reliability.

Technical Parameters:

Customization:

We provide versatile geometric tailoring. We can adjust wafer thickness and offer various off-cut orientations—ranging from standard 4° tilts to on-axis cuts—to match your epitaxial growth recipe. We also offer different doping options, adjusting resistivity levels to support both N-type conductivity for EV power modules and Semi-Insulating structures for high-frequency RF applications. By fine-tuning our growth cycles, we focus on providing the electrical consistency required for stable, high-performance devices.

FAQs:

Q:Does "Research Grade" (R-Grade) mean the wafer is broken?

A: No. An R-Grade wafer is physically intact and structurally 4H-SiC. However, it typically has a higher micropipe density or slightly more surface "pits" than Prime Grade. While it is not reliable for mass-producing high-voltage commercial chips, it is a cost-effective choice for university testing, polishing trials, or equipment calibration where 100% chip yield is not required.

Q: Why is Silicon Carbide so much more expensive than regular Silicon?

A: It mostly comes down to how hard it is to "grow" and "cut." While Silicon crystals can be grown into huge 12-inch ingots in a couple of days, SiC crystals take nearly two weeks to grow and result in much smaller sizes. Because SiC is almost as hard as diamond, slicing and polishing it requires specialized, expensive diamond-tipped tools and high-pressure processes. You are paying for a material that survives much higher heat and voltage than regular Silicon can handle.

Q: Do I need to polish the wafers again before using them?

A: No, if you order "epi-ready" wafers. These have already undergone chemical mechanical polishing, meaning the surface is atomically smooth and ready for your next production step. If you buy MP or "Dummy" wafers, they will have microscopic scratches and will require further professional polishing before you can build any working chips on them.

12Inch Sic Single Crystal Silicon Carbide Substrate Large Size High Purity Diameter 300mm Product Grade For 5G communication